APV – Effect on Halcogenide Thin Curtains

The article presents the results of volt – ampere and temperature experiments conducted on chalcogenide thin films. Based on them, it was found that in the chalcogenide thin films there are non-homogeneous areas of a series of chains consisting of periodic repeating p-n-junctions. No interaction, charge exchange, or “transistor effect” is observed between adjacent p-n junctions in these fields. APV-effect occurs in specimens of chalcogenide thin films with very high resistance (R≥108 Ohm).