Publication Details
Issue: Vol 3, No 9 (2020)
Pages: 257-259
ISSN: 2620-3502
Abstract
Semeconductor compounds with is ovalent impurities, effect of bismuth electrophysical properties, processing into a growing crystal, electrical properties of Ga P, mobility of crystals , the interaction of bismuth with silicon
Keywords
Semiconductors
crystallization
technological change
crystal
appearence