Changes in the Electrical Properties of Cdte Thin Films under the Influence of γ -Irradiation at Different Times

A CdTe coating with a thickness of 200 μm, formed on the surface of a substrate (Mo) by thermal evaporation under high vacuum conditions, was studied. The CdTe coating was annealed at 10600C for 30 minutes under high vacuum, then irradiated with γ-rays at different times using a Co60 radioactive source. As a result of γ-irradiation, it was found that the CdTe crystal size (D) decreased from 60 nm to 2 nm, and the number of dislocations (δ) increased from 2.7*1010 to 1*1015cm-2.It was found that the I-U ratio of the CdTe crystal (U) decreases from (I)-1*10-7A to 7.41*10-10A at -5 V. It has been determined that the crystal structure of CdTe changes significantly after γ-irradiation.