Publication Details
Abstract
This review critically analyzes recent developments in state-of-the-art semiconductor devices with particular focus on how the architecture, fabrication technologies and reliability constraints depend on each other. IEEE Xplore, ScienceDirect, SpringerLink, Nature Portfolio journals, and ACS Publications were used as sources of structured literature review on the topic of the study, concentrating on the peer-reviewed articles that present the performance of the devices, fabrication integration, and a reliability behavior. The review presents an overview of the advances in the main types of devices such as gate-all-around field-effect transistors (GAAFETs), complementary FETs (CFETs), two-dimensional (2D) material transistors, wide-bandgap GaN and SiC power devices, and memristive/neuromorphic systems. The results reveal that GAAFET implementations provide obvious advantages in control of leakage as well as electrostatic, however such advantages are less and less with respect to fabrication delicatenesses, self-heating, and stacked channel variation. FETs Two-dimensional FETs have a high theoretical scalability but are limited by contact resistance, reproducibility at the wafer scale and stability in operation. Conversely, technological maturity and dominance of power and automotive in applications are found in the case of GaN and SiC devices, even though reliability issues of trapping and oxide degradation of gates remain a significant problem. The application of memristive devices in edges artificial intelligence and neuromorphic computing is promising, but its usage is hindered by the lack of endurance variability and variability in stochastic switching to scale to large scale. The review finds that reliability has become the most critical bottleneck below the 3-nm scale, with monolithic three-dimensional integration, new materials, and AI-assisted predictive reliability modeling being the way forward to continue with semiconductor innovation in the future.