Abstract
With a doped layer thickness of the order of several hundred angstroms, due to the Cd concentration gradient in Cu2-xS, an electric field of about 105 V/cm should appear. Many experimental data on the study of electrical and photoelectric characteristics of Cu2-xS-CdS heterojunctions confirm the validity of these considerations. A band diagram of solar cells based on Cu2-xS-CdS is proposed.
Keywords
Cu2-xS-CdS
Spectral dependence of U xx SE Cu 2-x S-CdS
Cu 2-х S-CdS confirm the validity of these arguments